Kundu, Kusumita and Ghosh, Arnab and Ray, Apurba and Das, Sachindranath and Chakraborty, Joy and Kumar, Suresh and Prasad, Namburi E and Banerjee, Rajat (2020) Boron-doped silicon carbide (SiC) thin film on silicon (Si): a novel electrode material for supercapacitor application. Journal of Materials Science-Materials in Electronics, 31 (20). pp. 17943-17952. ISSN 0957-4522

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Abstract

In this work, we report the synthesis of silicon carbide (SiC) thin film on silicon by modified chemical vapour deposition technique using boron-doped liquid polycarbosilane as a precursor. Subsequent microscopic and physical characterizations of this film show the presence of SiC nanocrystal along with boron in the SiC thin film. The electrochemical characterizations of the film shows a highest capacitance of 232F/g at 2.2A/g current density from Galvanostatic charging-discharging method with good cyclic stability upto 2000 cycles. The high capacitance value is attributed to the surface defect states and amorphous carbon which acts as the charge active sites. The result further infers that the (B)SiC/Si is a promising electrode material for high-performance energy storage application.

Item Type:	Article
Subjects:	Engineering Materials
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	25 Jan 2021 10:57
Last Modified:	25 Jan 2021 10:57
URI:	http://cgcri.csircentral.net/id/eprint/4865

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