Nagabhushana, H. and Prashantha, S. C. and Nagabhushana, B. M. and Lakshminarasappa, B. N. and Singh, Fouran and Chakradhar, R P S (2008) Ion beam-induced luminescence and photoluminescence of 100 MeV Si8+ ion irradiated kyanite single crystals. SOLID STATE COMMUNICATIONS, 147 (9-10). pp. 377-380. ISSN 0038-1098

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Abstract

lonoluminescence (IL) of kyanite single crystals during 100 MeV Si8+ ion irradiation has been studied in the fluence range 1.87-7.50 x 10(11) ions/cm(2). Photoluminescence (PL) of similar dimensional crystals was recorded with same ions and energy in the fluence range 1 x 10(11) -5 x 10(13) ions/cm(2) with an excitation of 442 non He-Cd laser beam. A sharp IL and broad PL peaks at similar to 689 and 706 run were recorded. This is attributed to luminescence centers activated by Fe2+ and Fe3+ ions. It is observed that up to a given fluence, the IL and PL peak intensities increase with increase of Si8+ ion fluence. The stability of the chemical species was Studied on with and without irradiated samples by means of FT-IR spectroscopy. The results confirm that the O-Si-H type bonds covering on the surface of the sample. This layer might be acting as a protective layer and there by reducing the number of non-radiative recombination centers. (c) 2008 Elsevier Ltd. All rights reserved.

Item Type:	Article
Uncontrolled Keywords:	kyanite; lonoluminescence; photoluminescence; swift heavy ion irradiation
Subjects:	Processing Science
Divisions:	Glass
Depositing User:	Bula Ghosh
Date Deposited:	19 Jan 2012 12:16
Last Modified:	28 Mar 2018 09:25
URI:	http://cgcri.csircentral.net/id/eprint/386

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