Chakraborty, D and Mukerji, Joydeb (1982) Effect of crystal orientation, structure and dimension on vickers microhardness anisotropy of β-, α-Si3N4, α-SiO2 and α-SiC single crystals. Materials Research Bulletin, 17 (7). pp. 843-849. ISSN 0025-5408

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Abstract

Variation of Vickers microhardness on planes parallel to VMH(||C) and perpendicular to the C-axis VMH(IC) of hexagonal β-Si3N4, α-Si3N4, α-SiO2 (α-quartz) and α-SiC(6H) single crystals has been studied. The VMH (||C) VMH (||C) ratios have been correlated with a c ratios, a and c being unit cell parameters of the single crystals. VMH(||C) was found to be independent of orientation of Vickers indenter on basal plane (0001) of α-SiC, while VMH(||C) was found to vary with Vickers indenter direction on prismatic plane (10-10) of α-SiC. VMH(||C) of β-Si3N4 single crystals was found to depend on the aspect ratio of β-Si3N4, while VMH(||) was found to be independent of the dimension of basal plane. VMH(||C) of α-SiC single crystals was also found to be independent of the dimension of basal plane of α-SiC. © 1982.

Item Type:	Article
Subjects:	Engineering Materials
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	24 May 2016 10:25
Last Modified:	24 May 2016 10:25
URI:	http://cgcri.csircentral.net/id/eprint/3389

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