Bose, A and Sreemany , Monjoy and Halder, S K and Bhattacharyya, D K and Sen, Suchitra (2008) Preparation and characterization of PZT thin films. In: SMART DEVICES: MODELING OF MATERIAL SYSTEMS.

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Abstract

In analogy with Piezoelectric Wafer Active Sensors (PWAS), Lead Zirconate Titanate (PZT) thin films also seem to be promising for Structural Health Monitoring (SHM) due to a number of reasons. Firstly, PZT thin films with well oriented domains show enhanced piezoelectric response. Secondly, PWAS requires comparatively large voltage leading to a demand for thin PZT films (<< mu m in thickness) for low voltage operation at <= 10V. This work focuses on two different aspects: (a) growing oriented PZT thin films in ferroelectric perovskite phase in the range of (80 - 150) nm thickness on epitaxial Si/Pt without a seed layer and (b) synthesizing perovskite phase in PZT thin films on Coming glass 1737 using a seed layer of TiOx (TiOx thickness ranging between 30 nm to 500 nm).

Item Type:	Conference or Workshop Item (Paper)
Additional Information:	International Workshop on Smart Devices - Modeling of Material Systems, Chennai, INDIA, JAN 10-12, 2008
Uncontrolled Keywords:	thin films; R F sputtering; piezoelectric; perovskite; X-ray diffraction; field emission scanning electron microscopy; residual stress
Subjects:	Electronics
Divisions:	UNSPECIFIED
Depositing User:	Bula Ghosh
Date Deposited:	17 Jan 2012 07:30
Last Modified:	16 Mar 2012 06:08
URI:	http://cgcri.csircentral.net/id/eprint/225

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