Mitra, P and Chatterjee, A P and Maiti, Himadri Sekhar (1998) ZnO thin film sensor. Materials Letters, 35 (1-2). pp. 33-38. ISSN 0167-577X
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Abstract
The electrical and gas sensing properties of chemically deposited zinc oxide (ZnO) films were investigated. Two activation energy values, 0.3 eV and 0.8-0.9 eV, were determined in the temperature range 300-400 K which are attributed to oxygen vacancy (V-O) donor and heat of chemisorption of the O-2(-) species. The adsorption of oxygen on ZnO leads to a stable and highly resistive surface suitable for sensor operation in the resistive-mode. A high sensitivity (S> 99%) is observed for 3 vol% hydrogen (H-2) in air along with a strong surface reduction. For liquid petroleum gas (LPG), a high sensitivity (S = 50-75%) is observed in the 0.4-1.6 vol% concentration range in air which is an important commercial range for LPG alarm development. (C) 1998 Elsevier Science B.V.
Item Type: | Article |
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Uncontrolled Keywords: | zinc oxide; thin film; gas sensor; hydrogen; liquid petroleum gas |
Subjects: | Electronics Engineering Materials |
Divisions: | UNSPECIFIED |
Depositing User: | Bidhan Chaudhuri |
Date Deposited: | 12 Jul 2012 07:25 |
Last Modified: | 12 Jul 2012 07:25 |
URI: | http://cgcri.csircentral.net/id/eprint/1566 |
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