Vishwas, M and Rao, K Narasimha and Gowda, K V Arjuna and Chakradhar, R P S (2010) Effect of sintering on optical, structural and photoluminescence properties of ZnO thin films prepared by sol-gel process. Spectrochemica Acta Part A-Molecular and Biomolecular Spectroscopy, 77 (1). pp. 330-333. ISSN 1386-1425

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Abstract

Zinc oxide (ZnO) thin films have been deposited on glass substrates via sol-gel technique using zinc acetate dihydrate as precursor by spin coating of the sol at 2000 rpm. Effects of annealing temperature on optical, structural and photo luminescence properties of the deposited ZnO films have been investigated. The phase transition from amorphous to polycrystalline hexagonal wurtzite structure was observed at an annealing temperature of 400 degrees C. An average transmittance of 87% in the visible region has been obtained at room temperature. The optical transmittance has slightly increased with increase of annealing temperature. The band gap energy was estimated by Tauc's method and found to be 3.22 eV at room temperature. The optical band gap energy has decreased with increasing annealing temperature. The photoluminescence (PL) intensity increased with annealing temperature up to 200 degrees C and decreased at 300 degrees C. (c) 2010 Elsevier B.V. All rights reserved.

Item Type:	Article
Uncontrolled Keywords:	ZnO films; Optical properties; XRD; PL; Sol-gel
Subjects:	Engineering Materials
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	16 Feb 2012 10:52
Last Modified:	26 May 2016 05:03
URI:	http://cgcri.csircentral.net/id/eprint/936

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