Bysakh, Sandip and Mitsuishi, Kazutaka and Song, Minghui and Furuya, Kazuo and Chattopadhyay, Kamanio (2011) Formation of amorphous xenon nanoclusters and microstructure evolution in pulsed laser deposited Ti(62.5)Si(37.5) thin films during Xe ion irradiation. Journal of Materials Research, 26 (1). pp. 62-69. ISSN 0884-2914

PDF - Published Version Restricted to Registered users only Download (589Kb) | Request a copy

Abstract

As deposited amorphous and crystallized thin films of Ti 37.5% Si alloy deposited by pulsed laser ablation technique were irradiated with 100 keV Xe(+) ion beam to an ion fluence of about 10(16) ions-cm(-2). Transmission electron microscopy revealed that the implanted Xe formed amorphous nanosized clusters in both cases. The Xe ion-irradiation favors nucleation of a fcc-Ti(Si) phase in amorphous films. However, in crystalline films, irradiation leads to dissolution of the Ti(5)Si(3) intermetallic phase. In both cases, Xe irradiation leads to the evolution of similar microstructures. Our results point to the pivotal role of nucleation in the evolution of the microstructure under the condition of ion implantation.

Item Type:	Article
Subjects:	Microstructure and Characterization
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	16 Jan 2012 12:02
Last Modified:	05 Mar 2016 15:06
URI:	http://cgcri.csircentral.net/id/eprint/80

Actions (login required)

View Item