Maity, A K and Lee, J Y M and Sen, Amarnath and Maiti, Himadri Sekhar (2004) Negative differential resistance in ferroelectric lead zirconate titanate thin films: Influence of interband tunneling on leakage current. Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers , 43 (10). pp. 7155-7158. ISSN 0021-4922

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Abstract

The leakage current in ferroelectric thin films is one of the most pertinent issues for their application in microelectronics. We argue that the leakage current in ferroelectric films at low electric field can arise from interband tunneling as opposed to Fowler-Nordheim tunneling at high electric field. We substantiate our argument by showing the evolution of negative differential resistance (NDR) with decreasing film thickness in the I-V curves of lead zirconate titanate (PZT) films prepared under controlled conditions.

Item Type:	Article
Uncontrolled Keywords:	PZT; thin film; ferroelectric material; interband tunneling; negative differential resistance; leakage current
Subjects:	Electronics
Divisions:	UNSPECIFIED
Depositing User:	Subhra Lahiri
Date Deposited:	30 Jan 2012 09:58
Last Modified:	04 Apr 2016 10:20
URI:	http://cgcri.csircentral.net/id/eprint/522

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