Vishwas, M and Rao, K Narasimha and Phani, A R and Gowda, K V Arjuna and Chakradhar, R P S (2011) Spectroscopic and electrical properties of SiO(2) films prepared by simple and cost effective sol-gel process. Spectrochimica Acta Part A-Molecular and Biomolecular Spectroscopy, 78 (2). pp. 695-699. ISSN 1386-1425

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Abstract

Amorphous SiO(2) thin films were prepared on glass and silicon substrates by cost effective sol-gel method. Tetra ethyl ortho silicate (TEOS) was used as the precursor material, ethanol as solvent and concentrated HCl as a catalyst. The films were characterized at different annealing temperatures. The optical transmittance was slightly increased with increase of annealing temperature. The refractive index was found to be 1.484 at 550 nm. The formation of SiO(2) film was analyzed from FT-IR spectra. The MOS capacitors were designed using silicon (1 0 0) substrates. The current-voltage (I-V), capacitance-voltage (C-V) and dissipation-voltage (D-V) measurements were taken for all the annealed films deposited on Si (1 0 0). The variation of current density, resistivity and dielectric constant of SiO(2) films with different annealing temperatures was investigated and discussed for its usage in applications like MOS capacitor. The results revealed the decrease of dielectric constant and increase of resistivity of SiO(2) films with increasing annealing temperature. (C) 2010 Elsevier B.V. All rights reserved.

Item Type:	Article
Uncontrolled Keywords:	SiO(2); Thin films; Sol-gel process; MOS capacitor; Annealing
Subjects:	Processing Science
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	25 Jan 2012 06:35
Last Modified:	28 Mar 2016 16:43
URI:	http://cgcri.csircentral.net/id/eprint/434

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