De, A and Biswas, Prasanta Kumar and Manara, J (2007) Study of annealing time on sol-gel indium tin oxide films on glass. Materials Characterization, 58 (7). pp. 629-636. ISSN 1044-5803

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Abstract

Indium and tin salt-based precursors maintaining In:Sn atomic ratio as 90: 10 were utilized for the development of sol-gel dip coated indium tin oxide films (ITO) on SiO2 coated (similar to 200 nm thickness) soda lime silica glass substrate. The gel films were initially cured in air at similar to 450 degrees C to obtain oxide films of physical thickness similar to 250 nm. These were then annealed in 95% Ar-5% H-2 atmosphere at similar to 500 degrees C. The annealing time was varied from 0.5 h to 5 h. Variation of annealing time did not show any considerable change of transmittance in the visible region. Thermal emissivity (epsilon(d), 0.67-6.79) of the films were evaluated from their hemispherical spectral reflectance. These passed through a minima with increasing annealing time as the reflectivity of the films in the mid-IR passed through a maxima. The microstructure of the films revealed systematic growth of the ITO grains. XRD and XPS studies revealed the presence of both In and Sn metals in addition to the metal oxides. The energy dispersive X-ray (EDX) analysis showed little lowering of tin content in the films with increasing annealing time.

Item Type:	Article
Subjects:	Physical Properties
Divisions:	Sol Gel
Depositing User:	Namita Dutta
Date Deposited:	23 Jan 2012 12:55
Last Modified:	23 Nov 2012 10:53
URI:	http://cgcri.csircentral.net/id/eprint/380

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