Sen, S and Chakraborty, N and Rana, P and Sahu, R and Singh, S and Panda, A K and Tripathy, S and Pradhan, D K and Sen, A (2016) Effect of Ti doping on the structural, electrical and magnetic properties of GaFeO3. Journal of Materials Science-Materials in Electronics, 27 (5). pp. 4647-4652. ISSN 0957-4522

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Abstract

Polycrystalline GaFe1-xTixO3 (x = 0, 0.05, 0.10, 0.15) samples were synthesized by solid state reaction. The effect of substitution of Ti at the Fe site on the structural parameters, dielectric and magnetic was studied. The monophasic compounds crystallized in the orthorhombic space group pc2(1)n and the unit cell volume decreases with increasing Ti content. The dielectric constant has increased while the dielectric loss has decreased at higher temperature as compared to parent compound GaFeO3 after doping Ti ions at the Fe site. Doping of Ti has also decreased the ferrimagnetism.

Item Type:	Article
Subjects:	Engineering Materials
Divisions:	Sensor and Actuator
Depositing User:	Bidhan Chaudhuri
Date Deposited:	09 Nov 2016 07:34
Last Modified:	09 Nov 2016 07:34
URI:	http://cgcri.csircentral.net/id/eprint/3692

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