Harun, S W and Paul, Mukul Chandra and Pal, Mrinmay and Dhar, A and Sen, Ranjan and Das, Shyamal and Bhadra, Shyamal Kumar and Shahabuddin, N S and Ahmad, H (2008) An efficient and flat-gain erbium-doped fiber amplifier in the region of 1550 nm to 1590 nm. Optoelectronics and Advanced Materials-Rapid Ccommunications, 2 (8). pp. 455-458. ISSN 1842-6573

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A flat gain erbium-doped fiber amplifier (EDFA) operating in the 1550 nm to 1590 nm region is demonstrated. The EDFA uses only a15m EDF as opposed to a standard L-band EDFA which requires significantly longer EDF lengths. The EDF is fabricated using a Modified Chemical Vapor Deposition process in conjunction with a solution doping technique. The NA, cut-off wavelength and erbium ion concentration of the fiber are obtained at 0.15, 998 nm and 900 ppm respectively. The gain of the EDFA is flattened to a level of about 12 dB with a gain variation of less than 3 dB over a range from 1550 to 1590 nm with a 1480nm pump at 90mW. This amplifier operates on the energy transfer of the quasi-two-level system, whereby the C-band energy acts as a pump for the population inversion required for gain at the longer wavelength. The noise figure at the flat gain region varies from 6 to 8.5 dB.

Item Type: Article
Uncontrolled Keywords: Erbium-doped fiber amplifier; flat-gain EDFA; L-band EDFA; high concentration EDF
Subjects: Electronics
Divisions: Fiber Optics and Photonics
Depositing User: Bula Ghosh
Date Deposited: 18 Jan 2012 06:49
Last Modified: 21 Nov 2012 06:28
URI: http://cgcri.csircentral.net/id/eprint/357

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