Sinha, Subhojyoti and Chatterjee, Sanat Kumar and Ghosh, Jiten and Meikap, Ajit Kumar (2015) Electrical transport properties of polyvinyl alcohol-selenium nanocomposite films at and above room temperature. Journal of Materials Science, 50 (4). pp. 1632-1645. ISSN 0022-2461

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Abstract

Here, we report the DC and AC electrical properties of polyvinyl alcohol (PVA)-selenium (Se) nanocomposite films in the temperature (T) range 298 K a parts per thousand currency sign T a parts per thousand currency sign 420 K and in the frequency (f) range 120 Hz a parts per thousand currency sign f a parts per thousand currency sign 1 MHz. The introduction of selenium nanoparticles into the PVA matrix slightly increases the values of DC conductivity whose temperature dependency obeys Vogel-Fulcher-Tammann law. The AC conductivity follows a power law with frequency in which the temperature dependence of the frequency exponent suggests that the correlated barrier hopping is the dominant charge transport mechanism for the nanocomposite films. Comparative discussions with Dyre's random free-energy barrier model have also been made in this regard. The increase in AC conductivity with increase in nanoparticles concentration was also observed and attributed to the corresponding increase in conducting channels in the PVA matrix. The real part of the dielectric constant increases either with increase in temperature or with increase in selenium nanoparticles loading into the polymer matrix, which may be attributed to the enhancement of interfacial polarization. The frequency dispersion of the dielectric spectra has been modeled according to the modified Cole-Cole equation. Well-defined peaks were appeared in the plotting of imaginary part of electric modulus with frequency above room temperature, which was fitted with suitable equations to account for the deviations from ideal Debye-type behavior. Though the current-voltage characteristics are linear at smaller voltages, it appreciably becomes nonlinear at higher voltages. This nonlinearity has been accounted in light of Werner's model and back to back Schottky diode model.

Item Type:	Article
Subjects:	Electronics
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	08 Jan 2016 09:02
Last Modified:	08 Jan 2016 09:02
URI:	http://cgcri.csircentral.net/id/eprint/3111

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