Sinha, Subhojyoti and Chatterjee, Sanat Kumar and Ghosh, Jiten and Meikap, Ajit Kumar (2015) Electrical transport properties of consolidated ZnSe quantum dots at and above room temperature. Current Applied Physics , 15 (4). pp. 555-562. ISSN 1567-1739

PDF - Published Version Restricted to Registered users only Download (3211Kb) | Request a copy

Abstract

Here we report a comprehensive study on the prevailing conduction mechanism and dielectric relaxation behavior of consolidated Zinc Selenide quantum dots in the frequency range of 1 kHz <= f <= 1.5 MHz and in the temperature range of 298K < T < 573 K. The ac conductivity increases either with increase in temperature or with increase in frequency, which is explained by the Jonscher Power law. At higher temperatures, correlated barrier hopping is found to be the prevalent charge transport mechanism with a maximum barrier height of 0.88 eV. The dielectric constant of the sample is found to exhibit weak temperature dependence. DC conductivity study reveals the semiconducting nature of the sample and it is discussed in the light of polaron hopping conduction. From the impedance spectroscopic study, role of the grains and grain boundaries in the overall electrical transport properties have been elucidated by considering an electrical equivalent circuit (composed of resistances and constant phase elements). Electric modulus study reveals non-Debye responses of the sample in the experimental range. (C) 2015 Elsevier B.V. All rights reserved.

Item Type:	Article
Subjects:	Electronics
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	08 Jan 2016 09:02
Last Modified:	08 Jan 2016 09:02
URI:	http://cgcri.csircentral.net/id/eprint/3110

Actions (login required)

View Item