Roy, Subir and Maharana, Rajalaxmi and Veena, M and Kumar, Atul and Bysakh, Sandip and Kamat, S V (2015) Development of crack free BLT thick films by chemical solution deposition technique. Thin Solid Films, 589. pp. 686-691. ISSN 0040-6090

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Abstract

Crack free (Bi3.25La0.75Ti3O12) BLT film of similar to 1 mu m thickness was deposited on Pt/Si(100) wafer by sol-gel methodology using a polymeric additive: polyvinyl pyrrolidone. The remnant polarization and coercive field values measured from the P-E hysteresis loops for BLT films annealed at 650 degrees C and 700 degrees C were 10 mu C/cm(2), 110 kV/cm and 11.5 mu C/cm(2), 111.5 kV/cm, respectively. The leakage current in the BLT film was remarkably low up to an electric field of 150 kV/cm for which the measured leakage current density was 2.5 x 10(-6) A/cm(2). The leakage current behavior showed Ohmic conduction in the low-field region and was dominated by space charge in the high-field region. (C) 2015 Elsevier B.V. All rights reserved.

Item Type:	Article
Subjects:	Engineering Materials
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	04 Jan 2016 08:53
Last Modified:	04 Jan 2016 08:53
URI:	http://cgcri.csircentral.net/id/eprint/3086

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