Ghosh, S and Paul, Mukul Chandra and Das, S (2014) Fabrication of silicon carbide semiconductor core optical fibre preform. In: 2013 INTERNATIONAL CONFERENCE ON MICROWAVE AND PHOTONICS (ICMAP), DEC 13-15, 2013, Dhanbad, INDIA.

Full text not available from this repository. (Request a copy)

Abstract

This work describes for the first time about the development of silicon carbide (SiC) semiconductor doped optical fibre preform made by modified chemical vapor deposition (MCVD) process followed by solution doping technique. Quantum dot level nano crystals are observed after thermal annealing of the preform samples at 1400 degrees C temperature. We explained the formation of silicon carbide semiconductors within silica glass based optical fibre preform thermodynamically followed by material characterization through EPMA, SEM, TEM, and XRD to investigate material properties of the preform samples. Such kind of optical fibre preforms will be suitable for making of silicon carbide semiconductor doped optical fibres which may open the door to use itself in the field of non-linear optical devices.

Item Type:	Conference or Workshop Item (Paper)
Additional Information:	International Conference on Microwave and Photonics (ICMAP), Dhanbad, INDIA, DEC 13-15, 2013
Subjects:	Processing Science Electronics
Divisions:	Fiber Optics and Photonics
Depositing User:	Bidhan Chaudhuri
Date Deposited:	10 Jun 2015 07:26
Last Modified:	10 Jun 2015 07:26
URI:	http://cgcri.csircentral.net/id/eprint/2828

Actions (login required)

View Item