Chattopadhyay, K K and Sanyal, I and Bhattacharya, S K and Chaudhuri, S and Pal, A K (1991) Optical-properties of Cuinse2 films near the fundamental absorption-edge. Physica Status Solidi A-Applied Research, 125 (2). pp. 707-714. ISSN 0031-8965
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Abstract
Optical transitions near the fundamental band edge are studied for CuInSe2 films having different Cu/In ratios by analysing the variations of the absorption coefficient (alpha) with incident photon energy. The results indicate allowed direct transitions at 0.986 to 1.075 eV depending upon the Cu/In ratio. The band gap shifts towards lower energy for increasing copper content in the films. There are indications of forbidden direct transitions at energies 0.81 to 0.89 eV.
Item Type: | Article |
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Subjects: | Engineering Materials |
Divisions: | UNSPECIFIED |
Depositing User: | Bidhan Chaudhuri |
Date Deposited: | 12 Mar 2015 07:46 |
Last Modified: | 13 Mar 2015 12:21 |
URI: | http://cgcri.csircentral.net/id/eprint/2715 |
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