Emami, Siamak Dawazdah and Zarifi, Atieh and Rashid, Hairul Azhar Abdul and Muhammad, Ahmad Razif and Paul, Mukul Chandra and Halder, Arindam and Bhadra, Shyamal Kumar and Ahmad, Harith and Harun, Sulaiman Wadi (2014) Gain-shift induced by dopant concentration ratio in a thulium-bismuth doped fiber amplifier. Optics Express, 22 (6). pp. 7075-7086. ISSN 1094-4087

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Abstract

This paper details the effect of Thulium and Bismuth concentration ratio on gain-shift at 1800 nm and 1400 nm band in a Thulium-Bismuth Doped Fiber Amplifier (TBDFA). The effect of Thulium and Bismuth's concentration ratio on gain shifting is experimentally established and subsequently numerically modeled. The analysis is carried out via the cross relaxation and energy transfer processes between the two dopants. The energy transfer in this process was studied through experimental and numerical analysis of three samples with different Tm/Bi concentration ratio of 2, 0.5 and 0.2, respectively. The optimized length for the three samples (TBDFA-1, TBDFA-2 and TBDFA-3) was determined and set at 6.5, 4 and 5.5 m, respectively. In addition, the experimental result of Thulium Doped Fiber Amplifier (TDFA) was compared with the earlier TBDFA samples. The gain for TBDFA-1, with the highest Tm/Bi ratio, showed no shift at the 1800 nm region, while TBDFA-2 and TBDFA-3, possessing a lower Tm/Bi concentration ratio, shifted to the region of 1950 and 1960 nm, respectively. The gain shifting from 1460 nm to 1490 nm is also observed. The numerical model demonstrates that the common F-3(4) layer for 1460 nm emission (H-3(4)-> F-3(4)), and 1800 nm emission (F-3(4)-> H-3(6)) inversely affects the 1460 nm and 1800 nm gain shifting. (C) 2014 Optical Society of America

Item Type:	Article
Subjects:	Processing Science
Divisions:	Fiber Optics and Photonics
Depositing User:	Bidhan Chaudhuri
Date Deposited:	12 Dec 2014 10:54
Last Modified:	12 Dec 2014 10:54
URI:	http://cgcri.csircentral.net/id/eprint/2616

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