Mukherjee, Jonaki and Ranjan, Ashok and Saxena, Arvind K and Karan, Sankar and Dutta Majumder, Dwijesh K and Ghosh, Arnab and Ghosh, Sujan and Das, Probal Kumar and Banerjee, Rajat (2013) A novel carbon rich crystalline (C) SiC-Si(n) interface using liquid polycarbosilane as a precursor - a unique Schottky junction. Journal of Materials Chemistry C, 1 (42). pp. 6945-6951. ISSN 2050-7526

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Abstract

This paper presents a novel rectifying interface material using carbon rich crystalline (C)-SiC and n-type Si by a modified CVD technique, using liquid polycarbosilane as a precursor at 900 degrees C. The equilibrium band diagram and Fermi level alignment was explained using Poisson's model and the depletion approximation. The junction capacitance, depletion width and saturation current were evaluated and further discussed from the perspective of temperature dependency. The junction was found to be Schottky in nature, with a large breakdown voltage of 69 V and low space charge. This type of junction material, having good mechanical strength, is promising for high temperature and high power applications.

Item Type:	Article
Subjects:	Engineering Materials
Divisions:	Non-Oxide Ceramics & Composites
Depositing User:	Bidhan Chaudhuri
Date Deposited:	06 Feb 2014 08:57
Last Modified:	10 Feb 2014 07:32
URI:	http://cgcri.csircentral.net/id/eprint/2500

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