Sinha, Subhojyoti and Chatterjee, Sanat Kumar and Ghosh, Jiten and Meikap, Ajit Kumar (2013) Structural characterization and observation of variable range hopping conduction mechanism at high temperature in CdSe quantum dot solids. Journal of Applied Physics, 113 (9). Article No-093703. ISSN 0021-8979

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Abstract

We have used Rietveld refinement technique to extract the microstructural parameters of thioglycolic acid capped CdSe quantum dots. The quantum dot formation and its efficient capping are further confirmed by HR-TEM, UV-visible and FT-IR spectroscopy. Comparative study of the variation of dc conductivity with temperature (298K <= T <= 460 K) is given considering Arrhenius formalism, small polaron hopping and Schnakenberg model. We observe that only Schnakenberg model provides good fit to the non-linear region of the variation of dc conductivity with temperature. Experimental variation of ac conductivity and dielectric parameters with temperature (298K <= T <= 460 K) and frequency (80 Hz <= f <= 2MHz) are discussed in the light of hopping theory and quantum confinement effect. We have elucidated the observed non-linearity in the I-V curves (measured within +/-50 V), at dark and at ambient light, in view of tunneling mechanism. Tunnel exponents and non-linearity weight factors have also been evaluated in this regard. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4794019]

Item Type:	Article
Subjects:	Electronics
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	23 Sep 2013 09:32
Last Modified:	23 Sep 2013 09:32
URI:	http://cgcri.csircentral.net/id/eprint/2179

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