Rakshit, T and Manna, Indranil and Ray, S K (2013) Temperature-dependent photoluminescence properties of ZnO/Zn1-xMgxO multilayers grown by pulsed laser deposition. Journal of Luminescence, 136. pp. 285-290. ISSN 0022-2313

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Abstract

ZnO/Zn0.9Mg0.1O multilayer thin films were deposited on p-Si(1 0 0) substrates using pulsed laser deposition technique at varying substrate temperatures ranging from 300 degrees C to 700 degrees C. X-ray diffraction (XRD) studies reveal that the films possess a preferred (0 0 0 2) growth orientation with the intensity gradually increasing with substrate temperature. Temperature-dependent photoluminescence properties were studied in details to investigate the origin of near band edge emission and the quenching mechanism. The band gap at 10 K shows a blue-shift with the increase of substrate temperature, but is found to be higher for the sample grown at 500 degrees C than that of the 600 degrees C and 700 degrees C grown samples at all temperatures above 25 K. It appears that the dominant recombination mechanism changes from donor-bound to localized excitons with the increase in substrate temperature. (C) 2012 Elsevier B.V. All rights reserved.

Item Type:	Article
Subjects:	Engineering Materials
Divisions:	Director�s Secretariat
Depositing User:	Bidhan Chaudhuri
Date Deposited:	16 Sep 2013 09:10
Last Modified:	12 Mar 2016 18:27
URI:	http://cgcri.csircentral.net/id/eprint/2166

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