Mitra, P and Chatterjee, A P and Maiti, Himadri Sekhar (1998) Chemical deposition of ZnO films for gas sensors. Journal of Materials Science-Materials in Electronics, 9 (6). pp. 441-445. ISSN 0957-4522

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Abstract

Zinc oxide (ZnO) thin films were prepared following a chemical, deposition technique using a sodium zincate bath. Structural characterizations by scanning electron microscopy (SEM) and X-ray diffraction (XRD) indicate the formation of ZnO film with a preferred c-axis orientation. The electrical conductance of the ZnO films became stable and reproducible in the 300-500 K temperature range with two activation energy barrier values of 0.3 eV and 0.8 eV in the low temperature (300-420 K) and high temperature (430-500 K) ranges, respectively. The ZnO films prepared by this method are highly resistive, indicating the presence of a large density of oxygen adsorbed acceptor-like trap states (O-2(-), O-, etc.). Palladium sensitized ZnO films were exposed to hydrogen (H-2) with air as a carrier gas at different operating temperatures ranging between 150-375 degrees C and the response is evaluated.

Item Type:	Article
Subjects:	Electronics Engineering Materials
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	12 Jul 2012 07:25
Last Modified:	12 Jul 2012 07:25
URI:	http://cgcri.csircentral.net/id/eprint/1567

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