Bhadra, Shyamal Kumar and Bandyopadhyay, Tarun Kumar and Maiti, A K and Goswami, K (1999) Laser-induced process of binary alloying of Ge-Se. Surface Review and Letters, 6 (2). pp. 219-223. ISSN 0218-625X
PDF
- Published Version
Restricted to Registered users only Download (338Kb) | Request a copy |
Abstract
Thin films of chalcogenides are synthesized by CW argon ion laser irradiation of separate Ge/Se and Se/Te film sandwiches according to near stoichiometric proportions. The compound formation and crystalline transition of amorphous Se film are characterized by observing photomicrographs and optical absorption spectra. The composite film of bilayer Ge/Se does not form compounds but deposits as separate elements under equivalent laser fluence.
Item Type: | Article |
---|---|
Subjects: | Processing Science |
Divisions: | UNSPECIFIED |
Depositing User: | Bidhan Chaudhuri |
Date Deposited: | 19 Jun 2012 08:00 |
Last Modified: | 27 Mar 2016 13:07 |
URI: | http://cgcri.csircentral.net/id/eprint/1505 |
Actions (login required)
View Item |