Chatterjee , S and Maiti, Himadri Sekhar (2001) A novel method of doping PTC thermistor sensor elements during sintering through diffusion by vapour phase. Materials Chemistry and Physics, 67 (1-3). 294 -297. ISSN 0254-0584

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Abstract

Positive temperature coefficient (PTC) thermistors are widely used in electronics for its switching and power limiting ability. It can also be used for sensing of different parameters through accurate measurement of temperature. For the sensor application of PTC thermistor, its characteristics should be tailored very accurately For this, controlled doping with both acceptor and donor elements is required at a very high degree of accuracy. The method of solid state diffusion of ions has its inherent problems like inhomogeneity or accuracy in amount of addition at this low level of doping. Further, the acceptor concentration is required preferentially at grain boundaries which cannot be achieved through solid state diffusion. In this investigation, a novel method of doping through diffusion by vapour phase is applied to form modified PTC thermistor where accurate control of its electrical characteristics is achieved. This method of vapour phase doping results in preferential distribution of acceptorions attain boundaries resulting in improved characteristics

Item Type:	Article
Additional Information:	7th International Conference on Sintering Location: NEW DELHI, INDIA Date: FEB 22-25, 2000
Uncontrolled Keywords:	Thermistor; Sensor; Doping; Sintering; Vapour Phase Diffusion
Subjects:	Ceramic-Metal Systems
Divisions:	Advanced Clay & Traditional Ceramics
Depositing User:	Mrs Chandana Patra
Date Deposited:	21 Mar 2012 12:57
Last Modified:	15 May 2016 13:26
URI:	http://cgcri.csircentral.net/id/eprint/1305

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