Pal, Sudipto and Mandal, Abhijit and De, Goutam and Trave, Enrico and Bello, Valentina and Mattei, Giovanni and Mazzoldi, Paolo and Sada, Cinzia (2010) Improved photoluminescence properties of sol-gel derived Er(3+) doped silica films. Journal of Applied Physics, 108 (11). Article No.-113116. ISSN 0021-8979

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Silica films (amorphous and crystalline) doped with erbium were fabricated on silica glass substrate and characterized. The inorganic-organic hybrid sol-gel method was used to prepare the films and the Na codoping induced the crystallization of silica film. Photoluminescence (L) measurements revealed that the Er(3+) ions can be excited from the ground state through an energy transfer process mediated by active defective sites in SiO(2) film matrix. The annealing temperature and atmospheres have large effects on the local environment of Er(3+) and the 1.54 mu m PL intensity can be improved significantly by suitable heating treatments. We could correlate Er(3+) sensitization effect due to the presence of carbon related species in the films. The PL intensity at nonresonant (476.5 nm) condition can be made as intense as the resonant (488 nm) one, for particular annealing conditions. Noticeable changes in PL emission intensities have not been observed whether the matrix silica film is amorphous or crystalline in nature; however, the defect-related luminescence is almost vanished in case of crystalline silica films. (C) 2010 American Institute of Physics. [doi:10.1063/1.3518515]

Item Type: Article
Subjects: Engineering Materials
Depositing User: Bidhan Chaudhuri
Date Deposited: 15 Feb 2012 07:05
Last Modified: 15 Feb 2012 07:05

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