Basak, D and Mahanty, Sourindra (2003) Ti/Ni/Ti/Au ohmic contact to n-type 6H-SiC. Materials Science and Engineering B-Solid State Materials for Advanced Technology , 98 (2). pp. 177-180. ISSN 0921-5107

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We report a low temperature Ti/Ni/Ti/Au multilayered Ohmic contact to n-type 6H-SiC bulk sample. By using this simple metallization scheme and annealing at 750 degreesC, a low contact resistance is achieved for vertical conduction. Similar contact scheme on polished and unpolished sides of the bulk SiC substrate showed a difference in resistance due to different surface roughness. Xray diffraction results of the alloyed contact layer show that formation of TiSi2 layer might be responsible for the Ohmic contact. The roughness of the contact surface on the polished side and unpolished sides are found to be 5 and 38 nm, respectively. (C) 2003 Elsevier Science B.V. All rights reserved.

Item Type: Article
Uncontrolled Keywords: silicon carbide; semiconductors; ohmic contact; Schottky; barrier height
Subjects: Engineering Materials
Depositing User: Subhra Lahiri
Date Deposited: 13 Feb 2012 11:17
Last Modified: 13 Feb 2012 11:17

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