Kar, Ajitesh and Kundu, Kusumita and Chattopadhyay, Himadri and Banerjee, Rajat (2022) White light emission of wide-bandgap silicon carbide: A review. Journal of the American Ceramic Society, 105 (5). pp. 3100-3115. ISSN 0002-7820

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White light-emitting diodes (LEDs) are the most promising alternative to the conventional lighting sources due to their high efficacy and energy saving in illumination. Silicon carbide (SiC) has a wide optical bandgap and could be tailored to emit light at different wavelengths across the entire visible spectrum by introducing different dopants. Donor and acceptor (DA) co-doped fluorescent SiC (f-SiC) is a potential candidate for replacing phosphor material in white LEDs, as it has been observed as a good wavelength converter overcoming the disadvantages of rare earth-containing phosphors, such as poor color-rendering index (CRI), short lifetime, and short degradation time. The current study attempts to present an overview on the available approaches to fabricate f-SiC for generating the white light emission and challenges in fundamental research issues to enhance quantum efficiency, color rendering performance, stability, reproducibility of color quality, and lifetime of f-SiC.

Item Type: Article
Subjects: Engineering Materials
Divisions: Non-Oxide Ceramics & Composites
Depositing User: Bidhan Chaudhuri
Date Deposited: 30 Aug 2023 07:50
Last Modified: 30 Aug 2023 07:50
URI: http://cgcri.csircentral.net/id/eprint/5465

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