Goswami, Sudipta and Mishra, Shubhankar and Dana, Kausik and Mandal, Ashok Kumar and Dey, Nitai and Pal, Prabir and Satpati, Biswarup and Mukhopadhyay, Mrinmay and Ghosh, Chandan Kumar and Bhattacharya, Dipten (2022) Room-temperature multiferroicity in GaFeO3 thin film grown on (100)Si substrate. Journal of Applied Physics, 132 (21). Art No-214101. ISSN 0021-8979

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Room-temperature magnetoelectric multiferroicity has been observed in c-axis oriented GaFeO3 thin films (space group Pna2(1)), grown on economic and technologically important (100)Si substrates by a pulsed laser deposition technique. Structural analysis and comprehensive mapping of the Ga:Fe ratio across a length scale range of 10(4) reveals coexistence of epitaxial and chemical strain. It induces formation of finer magnetic domains and large magnetoelectric coupling-a decrease in remanent polarization by similar to 21% under similar to 50 kOe. Magnetic force microscopy reveals the presence of both finer (<100 nm) and coarser (similar to 2 mu m) magnetic domains. Strong multiferroicity in epitaxial GaFeO3 thin films, grown on a (100)Si substrate, brighten the prospect of their integration with Si-based electronics and could pave the way for development of economic and more efficient electromechanical, electrooptic, or magnetoelectric sensor devices. Published under an exclusive license by AIP Publishing.

Item Type: Article
Subjects: Engineering Materials
Depositing User: Bidhan Chaudhuri
Date Deposited: 30 Aug 2023 05:48
Last Modified: 30 Aug 2023 05:48
URI: http://cgcri.csircentral.net/id/eprint/5454

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