Aggarwal, Vishal Kumar and Ghatak, Ankita and Kanjilal, Dinakar and Kabiraj, Debdulal and Singha, Achintya and Bysakh, Sandip and Medda, Samar Kumar and Chakraborty, Supriya and Raychaudhuri, A K (2020) Fabrication of Germanium-on-insulator in a Ge wafer with a crystalline Ge top layer and buried GeO2 layer by oxygen ion implantation. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 260. Art No-114616. ISSN 0921-5107

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The paper reports fabrication of Germanium-on-Insulator (GeOI) wafer by Oxygen ion implantation of an undoped Ge wafer of orientation (100). O+ ions (energy 200 keV) were implanted to a fluence of 1.9 x 10(18) ions-cm(-2) and the implanted wafer was subjected to Rapid Thermal Annealing. The resulting wafer has a top crystalline Ge layer of similar to 220 nm thickness and resistivity approximate to 32 Ohm-cm and a buried Oxide layer (BOX) of crystalline GeO2 (thickness approximate to 0.62 mu m). The crystalline GeO2 layer has hexagonal crystal structure with lattice constants close to the standard values. Raman Spectroscopy and cross-sectional electron microscopy established that the top Ge layer was recrystallized during annealing with a residual tensile strain of around +0.4% and an estimated dislocation density of 2.7 x 10(7) cm(-2). The crystallinity and electrical characteristics of the top layer and the quality of the BOX layer are such that it can be utilized for device fabrication.

Item Type: Article
Subjects: Electronics
Depositing User: Bidhan Chaudhuri
Date Deposited: 25 Jan 2021 10:57
Last Modified: 25 Jan 2021 10:57

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