Maji, Swarup Kumar and Mukherjee, Nillohit and Dutta, Amit Kumar and Srivastava, Divesh N. and Paul, Parimal and Karmakar, Basudeb and Mondal, Anup and Adhikary, Bibhutosh (2011) Deposition of nanocrystalline CuS thin film from a single precursor: Structural, optical and electrical properties. Materials Chemistry and Physics, 130 (1-2). pp. 392-397. ISSN 0254-0584

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Nanocrystalline CuS thin films were fabricated using a metal organic deposition technique taking Cu(SOCCH(3))(2)Lut(2) as the precursor. X-ray diffraction (XRD) technique, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), UV-vis absorption spectroscopy, photoluminescence spectroscopy (PL) and Raman spectroscopic techniques were applied for characterization and found that the deposited CuS films were of `covellite' phase with an average particle size of 18 nm. Optical measurements showed significant amount of ``blue shift'' in the band gap energy. Hall measurements of the films showed p-type conduction nature with a carrier concentration in the range 10(12)-10(13) cm(-3).

Item Type: Article
Uncontrolled Keywords: Semiconductor; Single precursor; MOD technique; Nanoparticles; Optical properties; Electrical properties
Subjects: Processing Science
Divisions: Glass
Depositing User: Bidhan Chaudhuri
Date Deposited: 16 Jan 2012 12:14
Last Modified: 25 Feb 2013 08:20

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