Chatterjee, A P and Mukhopadhyay, Anoop Kumar and Chakraborty, A K and Sasmal, R N and Lahiri, Shyamal Kumar (1991) Electrodeposition and characterization of cuprous-oxide films. Materials Letters, 11 (10-12). pp. 358-362. ISSN 0167-577X

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Semiconducting cuprous oxide films were prepared by electrodeposition onto copper substrates from an alkaline CuSO4 bath at temperatures between 40 and 60-degrees-C. The Cu2O films, which were deposited using a potentiostatic method, were found to exhibit exponential growth kinetics. X-ray diffraction studies revealed the formation of only Cu2O films with (200) preferred orientation. The observed current-voltage characteristics of the Cu2O/Cu device structures were found to be similar to that of a metal-insulator-semiconductor (MIS) tunnel diode, indicating the presence of a thin unidentified interfacial insulating layer between the copper substrate and the cuprous oxide film.

Item Type: Article
Subjects: Engineering Materials
Depositing User: Bidhan Chaudhuri
Date Deposited: 12 Mar 2015 07:46
Last Modified: 20 Mar 2016 13:08

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