Islam, Tarikul and Saha, Debdulal and Hasan, Prince M Z and Islam, Sheikh Safiul (2011) gamma - Al(2)O(3)-Coated Porous Silicon for Trace Moisture Detection. IEEE Sensors Journal, 11 (4). pp. 882-887. ISSN 1530-437X

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Abstract

A simple moisture sensor working at room temperature has been fabricated using porous silicon (PS) coated with porous gamma-aluminium oxide (gamma - Al(2)O(3)). Porous silicon was formed by electrochemical anodization of p-type silicon. Thereafter, a porous layer of the PS was dip coated with gamma - Al(2)O(3) film. The gamma - Al(2)O(3) coating solution was made by a simple sol-gel method. The coated structure was sintered at 500 degrees C for 30 m to form a nano porous layer of metal oxide on the porous silicon. Sintering the gamma - Al(2)O(3)-coated PS sample improves the stability of the sensor. Two different sensors with membrane-type metal contact have been fabricated by varying electrochemical parameters of PS. The sensors were tested to detect low moisture content in the N(2) gaseous atmosphere in the range of 25 to 200 mu l. Results show that suitable pore morphology of the hybrid structure will enable one to obtain characteristics of a sensor comparable to the commercial porous alumina moisture sensor. It was further observed that the sensor output is highly reproducible and has negligible hysteresis.

Item Type:	Article
Uncontrolled Keywords:	Dip-coating of alumina on porous silicon; Hysteresis; Moisture sensor; Porous alumina; Porous silicon (PS); Stability
Subjects:	Electronics
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	16 Jan 2012 12:12
Last Modified:	26 May 2016 04:54
URI:	http://cgcri.csircentral.net/id/eprint/267

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