Bandyopadhyay, A K and Sen, S K and Sen , Suchitra (1990) Interfacial reactions in Ag-Zn thin-film couples. Thin Solid Films, 186 (1). pp. 87-98. ISSN 0040-6090

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Interfacial reactions in Agsingle bondZn thin film couples have been investigated by measuring the contact resistance and composite electrical resistance with time and temperature in order to understand the kinetic behaviour of the system. The resistivity measurements have been supplemented by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The activation energy of diffusion has been found to be 6.1 × 10−20 J from electrical resistivity measurements where the model assumes rapid grain boundary diffusion followed by a defect-assisted path for diffusion into the grain and 8.3 × 10−20 J from contact resistance measurements where the model is based on grain boundary diffusion. XRD indicates the growth of ß′-Agsingle bondZn phase even at room temperature which changes to the ß phase above 250°C. SEM confirms the diffusion of silver through zinc grain boundaries, especially at the interface boundary. TEM indicates the growth of grain size with annealing and confirms the presence of the ß′ phase.

Item Type: Article
Subjects: Microstructure and Characterization
Engineering Materials
Depositing User: Mrs Bula Ghosh
Date Deposited: 06 Dec 2013 08:52
Last Modified: 28 Feb 2016 15:54

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