Chakrabarti, Omprakash and Mukerji, Joydeb (1993) Oxidation-kinetics of reaction-sintered silicon-carbide. Bulletin of Materials Science, 16 (4). pp. 325-329. ISSN 0250-4707

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Abstract

The oxidation kinetics of reaction-sintered silicon carbide has been studied over the temperature range 1200-degrees to 1350-degrees-C. The material has a bulk density of 3.00 g/cm3 and the unreacted Si content is 22.5% (v/v). The activation energy for oxidation is 28.75 +/- 2.61 kcal/mol. It is proposed that the diffusion of oxygen through the growing oxide film is the rate-controlling process.

Item Type:	Article
Subjects:	Engineering Materials
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	20 Aug 2013 08:21
Last Modified:	05 Mar 2016 15:54
URI:	http://cgcri.csircentral.net/id/eprint/2022

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