Das, U K and Bhattacharyya, T K and Chaudhuri, P (1997) Enhanced boron doping in amorphous and microcrystalline silicon by Ar dilution. Journal of Physics D-Applied Physics, 30 (24). pp. 3371-3377. ISSN 0022-3727

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Abstract

Thin films of boron-doped silicon-hydrogen alloy materials have been deposited by plasma enhanced chemical vapour deposition using argon as the diluent gas. The effect of hydrogen and helium dilution on the film properties is also reported for comparison. Films deposited by dilution with argon showed a higher conductivity than those deposited with hydrogen or helium dilution at any gas phase doping and dilution level. Bonded boron content in the films was studied by measuring SiB with the help of secondary ion mass spectroscopy. The increase of conductivity even with a lowering of the SiB/Si ratio in the deposited films at high argon dilution (>95%) indicates an enhancement of doping efficiency, Moreover, boron-doped microcrystalline samples were prepared by argon dilution at low rf power density (35 mW cm(-2)) by decreasing the silane flow. The structural and electrical properties of the deposited films revealed a high degree of microcrystallinity. A higher deposition rate with less degradation of the transparent conducting oxide (TCO) coated substrates compared to hydrogen or helium dilution indicates compatibility of the argon dilution technique with solar cell fabrication processes.

Item Type:	Article
Subjects:	Engineering Materials
Divisions:	UNSPECIFIED
Depositing User:	Bidhan Chaudhuri
Date Deposited:	18 Jul 2012 08:04
Last Modified:	17 Sep 2015 06:23
URI:	http://cgcri.csircentral.net/id/eprint/1611

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