Mandal, S and Dhargupta, Kajal Kumar and Ghatak, Sankar (2002) Gas pressure sintering of SiC--AlN composites in nitrogen atmosphere. Ceramics International, 28 (2). pp. 145-151. ISSN 0272-8842

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The gas pressure sintering behaviour of SiC-5-25 wt.%, AIN composites was studied. Sintering temperature was varied from 1700-1950 degreesC under a nitrogen pressure of six bar at the final sintering temperature. Pore-free dense product was achieved for the sample of composition SiC-25 wt.% AIN sintered at 1950 degreesC. XRD patterns revealed a gradual transformation of cubic SiC to hexagonal form with increasing sintering temperature from 1700 to 1950 degreesC along with the densification of the specimen and solid solution hardening. Hardness of the sample sintered at 1950 C was found to increase with increasing AIN content from 21.26 to 25.36 GPa. (C) 2002 Elsevier Science Ltd and Techna S.r.l. All rights reserved.

Item Type: Article
Uncontrolled Keywords: Gas pressure sintering; SiC-AlN composites; Nitrogen atmosphere
Subjects: Engineering Materials
Divisions: Non-Oxide Ceramics & Composites
Depositing User: Bidhan Chaudhuri
Date Deposited: 23 Mar 2012 08:12
Last Modified: 23 Mar 2012 08:12

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