Chakrabarti, O P and Das, P K and Mukerji, Joydeb (2001) Growth of SiC particles in reaction sintered SiC. Materials Chemistry and Physics, 67 (1-3). 199 -202. ISSN 0254-0584

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For reaction sintered SiC (RSSC) prepared at 1600 degreesC by conventional melt infiltration technique, experimentation with two different particle sizes of initial SIG, viz., 0.2 and 23.65 mum, showed that the large SiC particles remained unaltered and the sizes of the fine-grained SiC increased several times yielding well-developed faceted crystals in the final material. To study the process further, compacts of SiC powder of particle sizes varying between 0.20 and 8.99 mum were reacted with pure Si at 1600 degreesC and the resulting SiC-Si boundaries were studied by optical microscopy. A distinct boundary layer with no penetration of Si in the compact of SiC of 0.2 mum was observed and the width of the SiC-Si boundary was found to be increasing linearly with time. Detailed SEM examination establishes the growth of the SiC upto around 4 mum from 0.2 mum starting powder. No such growth was observed in the case of starting SiC powder coarser than 0.2 mum. The growth of SiC is explained in terms of solution-reprecipitation mechanism

Item Type: Article
Additional Information: 7th International Conference on Sintering Location: NEW DELHI, INDIA Date: FEB 22-25, 2000
Uncontrolled Keywords: Silicon Carbide; Reaction Sintering; Melt Infiltration; Grain Growth; Solution-reprecipitation
Subjects: Engineering Materials
Divisions: Non-Oxide Ceramics & Composites
Depositing User: Mrs Chandana Patra
Date Deposited: 21 Mar 2012 12:49
Last Modified: 14 May 2016 16:13

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